HFD1N80 Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFD1N80 / HFU1N80 April 2006 HFD1N80 / HFU1N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 7.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 13 Ω (Typ. ) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N80 1 2 3 3 HFU1N80 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv.