HFH10N90Z Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFH10N90Z_HFA10N90Z Oct 2016 HFH10N90Z / HFA10N90Z 900V N-Channel.

Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Built-in ESD Diode Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 900 10 1.0 72 HFH10N90Z TO-3P HFA10N90Z TO-247 Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter TO-3P TO-247 VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Volt.