HFH10N80 - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.92 ȍ (Typ. ) @VGS=10V 100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

HFH10N80 n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFH10N80
Manufacturer	SemiHow
File Size	208.62 KB
Description	N-Channel MOSFET
Datasheet	HFH10N80 Datasheet

Full PDF Text Transcription for HFH10N80 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFH10N80. For precise diagrams, and layout, please refer to the original PDF.

HFH10N80 Dec 2005 HFH10N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 0.92 ȍ ID = 10 A FEATURES Originative New Design Superior Avalanche Rugged Technology R...

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ES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.92 ȍ (Typ.) @VGS=10V 100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3.

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