HFH11N90 - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 75 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

HFH11N90 n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFH11N90
Manufacturer	SemiHow
File Size	189.49 KB
Description	N-Channel MOSFET
Datasheet	HFH11N90 Datasheet

Full PDF Text Transcription for HFH11N90 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFH11N90. For precise diagrams, and layout, please refer to the original PDF.

HFH11N90 Dec 2005 HFH11N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ ȍ ID = 11 A FEATURES Originative New Design Superior Avalanche Rugged Technology R...

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ES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 75 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3.

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