HFP10N60 Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFP10N60 HFP10N60 600V N-Channel MOSFET.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.64 Ω (Typ. ) @VGS=10V Nov 2005 BVDSS = 600 V RDS(on) typ = 0.64 Ω ID = 9.5 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drai.