HFP10N65U - N-Channel MOSFET

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Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.8 ȍ7S#9GS=10V 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ = 0.8 ȍ ID = 9.5 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS E.

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Published: Apr 18, 2016 |