HFP12N65U Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFP12N65U HFP12N65U 650V N-Channel MOSFET.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.67 ȍ7S#9GS=10V 100% Avalanche Tested July 2014 BVDSS = 650 V RDS(on) typ = 0.67 ȍ ID = 12 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS E.