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HFS7N80 - 800V N-Channel MOSFET

Features

  • ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ (Typ. ) ) Extended Safe Operating Area Lower RDS(ON) : 1.55 ȍ (Typ. ) @VGS=10V 100% Avalanche Tested TC=25୅ unless otherwise specified RDS(on) typ = 1.55 ȍ ID = 7.0 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG.

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Datasheet preview – HFS7N80

Datasheet Details

Part number HFS7N80
Manufacturer SemiHow
File Size 214.36 KB
Description 800V N-Channel MOSFET
Datasheet download datasheet HFS7N80 Datasheet
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Full PDF Text Transcription

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HFS7N80 July 2005 BVDSS = 800 V HFS7N80 800V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ (Typ.) ) Extended Safe Operating Area Lower RDS(ON) : 1.55 ȍ (Typ.) @VGS=10V 100% Avalanche Tested TC=25୅ unless otherwise specified RDS(on) typ = 1.55 ȍ ID = 7.0 A TO-220F 1 2 3 1.Gate 2. Drain 3.
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