HFU2N60S Description
HFD2N60S_HFU2N60S March 2014 HFD2N60S / HFU2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1.9.
HFU2N60S Key Features
- Originative New Design
- Superior Avalanche Rugged Technology
- Robust Gate Oxide Technology
- Very Low Intrinsic Capacitances
- Excellent Switching Characteristics
- Unrivalled Gate Charge : 6.0 nC (Typ.)
- Extended Safe Operating Area
- Lower RDS(ON) ȍ 7S #9GS=10V
- 100% Avalanche Tested