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HFU2N60S Datasheet 600V N-Channel MOSFET

Manufacturer: SemiHow

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Datasheet Details

Part number HFU2N60S
Manufacturer SemiHow
File Size 164.30 KB
Description 600V N-Channel MOSFET
Download HFU2N60S Download (PDF)

Overview

HFD2N60S_HFU2N60S March 2014 HFD2N60S / HFU2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1.

Key Features

  • Originative New Design.
  • Superior Avalanche Rugged Technology.
  • Robust Gate Oxide Technology.
  • Very Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Unrivalled Gate Charge : 6.0 nC (Typ. ).
  • Extended Safe Operating Area.
  • Lower RDS(ON) ȍ 7S #9GS=10V.
  • 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N60S 1 2 3 HFU2N60S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VD.

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