HFU2N70S Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFD2N70S_HFU2N70S Dec 2009 HFD2N70S / HFU2N70S 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 5.0 ȍ ID = 1.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.2 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 5.0 ȍ (Typ. ) @VGS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N70S 1 2 3 HFU2N70S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Dra.