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HRLD55N03K Datasheet Preview

HRLD55N03K Datasheet

N-Channel MOSFET

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HRLD55N03K / HRLU55N03K
30V N-Channel Trench MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Excellent Switching Characteristics
Unrivalled Gate Charge : 50nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 4.2 (Typ.) @VGS=10V
Lower RDS(ON) : 7.5 (Typ.) @VGS=4.5V
100% Avalanche Tested
December 2014
BVDSS = 30 V
RDS(on) typ = 4.2mΩ
ID = 100 A
D-PAK I-PAK
2
1
1
32
3
HRLD55N03K HRLU55N03K
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25)*
Power Dissipation (TC = 25)
- Derate above 25
30
100 *
70 *
310 *
±20
300
7.5
3
75
0.5
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +175
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
mJ
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.0
50
110
Units
/W
SEMIHOW REV.A0,December 2014




SemiHow

HRLD55N03K Datasheet Preview

HRLD55N03K Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Off Characteristics
VDS = VGS, ID = 250
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VDS = 15, ID = 20 A
1.0
--
--
--
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250
VDS = 24 V, VGS = 0 V
VDS = 24 V, TJ = 125
VGS = ±20 V, VDS = 0 V
30
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
--
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 15 V, ID = 20 A,
RG = 6
VDS = 24 V, ID = 20 A,
VGS = 10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 20 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 20 A, VGS = 0 V
diF/dt = 55 A/μs
--
--
--
--
--
-- 2.4 V
4.2 5.5 m
7.5 9 m
60 --
S
-- -- V
-- 1
-- 100
-- ±100
1950
250
190
1
--
--
--
--
15 --
20 --
65 --
70 --
50 -- nC
8 -- nC
8 -- nC
-- 100
A
-- 310
-- 1.3 V
20 --
10 -- nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, IAS=10A, VDD=25V, RG=25, Starting TJ =25°C
SEMIHOW REV.A0,December 2014


Part Number HRLD55N03K
Description N-Channel MOSFET
Maker SemiHow
Total Page 9 Pages
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