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HRLD150N10K - N-Channel MOSFET

Key Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 80 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 13 Pȍ (Typ. ) @VGS=10V ‰ Lower RDS(ON) : 14 Pȍ (Typ. ) @VGS=4.5V ‰ 100% Avalanche Tested Jan 2015 BVDSS = 100 V RDS(on) typ = 13 Pȍ ID = 70 A D-PAK I-PAK 2 1 1 32 3 HRLD150N10K HRLU150N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID.

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Datasheet Details

Part number HRLD150N10K
Manufacturer SemiHow
File Size 326.03 KB
Description N-Channel MOSFET
Datasheet download datasheet HRLD150N10K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HRLD150N10K_HRLU150N10K HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 80 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 13 Pȍ (Typ.) @VGS=10V ‰ Lower RDS(ON) : 14 Pȍ (Typ.) @VGS=4.5V ‰ 100% Avalanche Tested Jan 2015 BVDSS = 100 V RDS(on) typ = 13 Pȍ ID = 70 A D-PAK I-PAK 2 1 1 32 3 HRLD150N10K HRLU150N10K 1.Gate 2. Drain 3.