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HRLD55N03K - N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 50nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 4.2 mΩ (Typ. ) @VGS=10V  Lower RDS(ON) : 7.5 mΩ (Typ. ) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 30 V RDS(on) typ = 4.2mΩ ID = 100 A D-PAK I-PAK 2 1 1 32 3 HRLD55N03K HRLU55N03K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS.

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Datasheet Details

Part number HRLD55N03K
Manufacturer SemiHow
File Size 929.53 KB
Description N-Channel MOSFET
Datasheet download datasheet HRLD55N03K Datasheet

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Full PDF Text Transcription (Reference)

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HRLD55N03K_HRLU55N03K HRLD55N03K / HRLU55N03K 30V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 50nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.2 mΩ (Typ.) @VGS=10V  Lower RDS(ON) : 7.5 mΩ (Typ.) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 30 V RDS(on) typ = 4.2mΩ ID = 100 A D-PAK I-PAK 2 1 1 32 3 HRLD55N03K HRLU55N03K 1.Gate 2. Drain 3.