Datasheet4U Logo Datasheet4U.com

HRLD125N06K - N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 50 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 10 mΩ (Typ. ) @VGS=10V  Lower RDS(ON) : 12 mΩ (Typ. ) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 10 mΩ ID = 70 A D-PAK I-PAK 2 1 3 HRD125N06K 1 2 3 HRU125N06K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value.

📥 Download Datasheet

Datasheet Details

Part number HRLD125N06K
Manufacturer SemiHow
File Size 861.52 KB
Description N-Channel MOSFET
Datasheet download datasheet HRLD125N06K Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HRL0103C Silicon Schottky Barrier Diode Renesas Technology

Other Datasheets by SemiHow

Part Number Description
HRLD150N10K N-Channel MOSFET
HRLD1B8N10K N-Channel MOSFET
HRLD370N10K N-Channel MOSFET
HRLD55N03K N-Channel MOSFET
HRLE320N03K N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HRLD125N06K_HRLU125N06K HRLD125N06K / HRLU125N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 50 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V  Lower RDS(ON) : 12 mΩ (Typ.) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 10 mΩ ID = 70 A D-PAK I-PAK 2 1 3 HRD125N06K 1 2 3 HRU125N06K 1.Gate 2. Drain 3.