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HRLD370N10K - N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 53 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 30 mΩ (Typ. ) @VGS=10V  Lower RDS(ON) : 33 mΩ (Typ. ) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 30 mΩ ID = 25 A D-PAK I-PAK 2 1 1 32 3 HRLD370N10K HRLU370N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDS.

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Datasheet Details

Part number HRLD370N10K
Manufacturer SemiHow
File Size 1.03 MB
Description N-Channel MOSFET
Datasheet download datasheet HRLD370N10K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HRLD370N10K_HRLU370N10K HRLD370N10K / HRLU370N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 53 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 30 mΩ (Typ.) @VGS=10V  Lower RDS(ON) : 33 mΩ (Typ.) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 30 mΩ ID = 25 A D-PAK I-PAK 2 1 1 32 3 HRLD370N10K HRLU370N10K 1.Gate 2. Drain 3.