HRLD1B8N10K - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 11.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 140 Pȍ (Typ. ) @VGS=10V Lower RDS(ON) : 185 Pȍ (Typ. ) @VGS=4.5V Built-in ESD Diode 100% Avalanche Tested Jan 2015 BVDSS = 100 V RDS(on) typ = Pȍ ID = 2.7 A D-PAK I-PAK 2 1 1 32 3 HRLD1B8N10K HRLU1B8N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol.

HRLD1B8N10K n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HRLD1B8N10K
Manufacturer	SemiHow
File Size	329.86 KB
Description	N-Channel MOSFET
Datasheet	HRLD1B8N10K Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HRL0103C	Silicon Schottky Barrier Diode	Renesas Technology

Other Datasheets by SemiHow

Part Number	Description
HRLD125N06K	N-Channel MOSFET
HRLD150N10K	N-Channel MOSFET
HRLD370N10K	N-Channel MOSFET
HRLD55N03K	N-Channel MOSFET
HRLE320N03K	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HRLD1B8N10K_HRLU1B8N10K HRLD1B8N10K / HRLU1B8N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 11.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 140 Pȍ (Typ.) @VGS=10V Lower RDS(ON) : 185 Pȍ (Typ.) @VGS=4.5V Built-in ESD Diode 100% Avalanche Tested Jan 2015 BVDSS = 100 V RDS(on) typ = Pȍ ID = 2.7 A D-PAK I-PAK 2 1 1 32 3 HRLD1B8N10K HRLU1B8N10K 1.Gate 2. Drain 3.