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HRLE320N03K
Jan 2016
HRLE320N03K
30V N-Channel Trench MOSFET
Features
Low Dense Cell Design Reliable and Rugged Advanced Trench Process Technology
Application
Power Management in Inverter System Synchronous Rectification
Key Parameters
Parameter BVDSS ID
RDS(on), typ @10V RDS(on), typ @4.5V
Value 30 5 27 33
Unit V A Pȍ Pȍ
Package & Internal Circuit
SOT-23
D
S G
Absolute Maximum Ratings TA=25 unless otherwise specified
Symbol
Parameter
Value
VDSS VGS ID IDM PD TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current Pulsed Drain Current
TA = 25 TA = 70
Power Dissipation
TA = 25 TA = 70
Operating and Storage Temperature Range
30 ρ20
5 4 20 1.4 0.
HRLE320N03K Datasheet
