SKM200GB12F4
SEMITRANS® 3
High Speed IGBT4 Modules
SKM200GB12F4
Features*
• High speed trench and field-stop IGBT
• CAL4 ultra-fast = soft switching 4.
generation CAL-diode
• Insulated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• For higher switching frequencies above
15kHz
• UL recognized, file no. E63532
Typical Applications
• UPS
• Electronic welders
• Inductive heating
• Switched mode power supplies
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
GB
© by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 2 x ICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
RG on/off ≥ 2 Ω
Tj = 150 °C
Inverse diode
VRRM
IF
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
module without TIM
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 7.6 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 200 A
VGE = +15/-15 V
RG on = 1 Ω
RG off = 1 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 8800 A/µs Tj = 150 °C
di/dtoff = 2500 A/µs
dv/dt = 4570 V/µs Tj = 150 °C
Rth(j-c)
Rth(c-s)
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
Rev. 1.0 – 30.01.2020
Values
1200
312
239
200
400
-20 ... 20
10
-40 ... 175
1200
227
167
200
400
990
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
V
A
A
A
A
A
°C
A
°C
V
min.
5.1
typ.
2.06
2.59
1.10
0.95
4.8
8.2
5.8
12.3
0.81
0.69
1134
2.4
127
28
7.5
341
66
15.7
0.061
max. Unit
2.42
V
2.97
V
1.28
V
1.13
V
5.7
mΩ
9.2
mΩ
6.4
V
2.7
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
0.115 K/W
K/W
1
