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SPM6G060-120D Datasheet Three-Phase IGBT BRIDGE

Manufacturer: Sensitron

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Datasheet Details

Part number SPM6G060-120D
Manufacturer Sensitron
File Size 92.00 KB
Description Three-Phase IGBT BRIDGE
Download SPM6G060-120D Download (PDF)

General Description

: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 500 µA, VGE = 0V Continuous Collector Current TC = 25 OC O BVCES IC ICM VGE IGES ICES 1200 - - 60 40 100 +/-20 +/- 200 V A A V nA TC = 90 C Pulsed Collector Current, Pulse Width limited by TjMax Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V Zero Gate Voltage Collector Current www.DataSheet4U.com VCE = 1200 V, VGE=0V Ti=25oC VCE = 800 V, VGE=0V Ti=125oC Collector to Emitter Saturation Voltage, IC = 40A, VGE = 15V, Maximum Thermal Resistance Maximum operating Junction Temperature Maximum Storage Junction Temperature Tj = 25 C Tj = 125 C O O 1 10 VCE(SAT) 1.9 2.1 RθJC Tjmax Tjmax -40 -55 2.3 0.6 150 150 o mA mA V C/W o o C C • 221 West Industry Court  Deer Park, NY 11729  (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 1 of 6 SPM6G060-120D SENSITRON TECHNICAL DATA Datasheet 4165, Rev.

B Over-Temperature Shutdown Over-Temperature Shutdown Over-Temperature Output Over-Temperature Shutdown Hysteresis Tsd Tso 90 100 10 20 115 o C 10mV/oC o C ULTRAFAST DIODES RATING AND CHARACTERISTICS Diode Peak Inverse Voltage Continuous Forward Current, TC = 90 C Forward Pulse Current, Pulse Width limited by TjMax Diode Forward Voltage, IF = 40A, Tj = 25 C Tj = 125 OC Diode Reverse Recovery Time (IF=40A, VRR=600V , di/dt=800 A/µs) Maximum Thermal Resistance O O PIV IF IFp VF 1200 - 1.8 1.8 40 100 2.3 V A A V trr RθJC - 240 - 1.0 nsec o C/W Gate Driver Supply Voltage Input On Current Opto-Isolator Logic High Input Threshold Input Reverse Breakdown Voltage Input Forward Voltage @ Ii

Overview

SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 4165, Rev.

B SPM6G060-120D Three-Phase IGBT BRIDGE, With Gate Driver and Optical.

Key Features

  • 4- Under-voltage shutdown is automatically reset once the VCC rises above the 12.1V threshold limit. 5- Desaturation shutdown is a latching feature and internally reset. 6- When any of the internal protection features is activated, SD is pulled down. 7- SD can be used to shutdown all IGBTs by an external command. An open collector switch shall be used to pull down SD externally. 8- Also, SD can be used as a fault condition output. Low output at SD indicates a fault situation. b- Fault Output Fe.

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