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SPM6G080-060D Datasheet Three-Phase IGBT BRIDGE

Manufacturer: Sensitron

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Datasheet Details

Part number SPM6G080-060D
Manufacturer Sensitron
File Size 110.49 KB
Description Three-Phase IGBT BRIDGE
Download SPM6G080-060D Download (PDF)

General Description

: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V www.DataSheet4U.com BVCES TC = 25 OC TC = 90 C ICM VGE IGES ICES O 600 - - V IC - - 80 70 A - - 170 +/-20 +/- 100 A V nA Zero Gate Voltage Collector Current VCE = 600 V, VGE=0V Ti=25oC VCE = 480 V, VGE=0V Ti=125oC Collector to Emitter Saturation Voltage, IC = 60A, VGE = 15V, Maximum Thermal Resistance TC = 25 C O 1 10 VCE(SAT) 1.7 2.0 mA mA V RθJC - - 0.45 o C/W Brake IGBT SPECIFICATIONS Continuous Collector Current Pulsed Collector Current, 0.5mS TC = 25 OC TC = 90 C ICM O IC - - 40 25 120 A A Brake Resistor SPECIFICATIONS Maximum Continuous power dissipation Impulse Energy Maximum operating Junction Temperature Maximum Storage Junction Temperature Tjmax Tjmax -40 -55 Pd 2 80 150 150 watt Joules o C C o • 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 1 of 6 .

SENSITRON TECHNICAL DATA Data Sheet 4098, Rev.

D Over-Temperature Shutdown Over-Temperature Shutdown Over-Temperature Output Over-Temperature Shutdown Hysteresis Tsd Tso 100 110 10 20 SPM6G080-060D 120 o C 10mV/oC o C ULTRAFAST DIODES RATING AND CHARACTERISTICS Diode Peak Inverse Voltage Continuous Forward Current, TC = 90 C Forward Surge Current, tp = 10 msec Diode Forward Voltage, IF = 60A O PIV IF IFSM VF trr RθJC 600 - 1.4 90 60 300 1.7 160 V A A V nsec o Diode Reverse Recovery Time (IF=60A, VRR=300V , di/dt=200

Overview

SENSITRON SEMICONDUCTOR TECHNICAL DATA Data Sheet 4098, Rev.

Key Features

  • 4- Under-voltage shutdown is automatically reset after 300 msec once the VCC rises above the threshold limit. 5- Desaturation shutdown is a latching feature and internally reset after 300 msec. 6- When any of the internal protection features is activated, SD is pulled down. 7- SD can be used to shutdown all IGBTs except the brake IGBT by an external command. An open collector switch shall be used to pull down SD externally. 8- Also, SD can be used as a fault condition output. Low output at SD i.

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