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Siemens Electronic Components Datasheet

BCV62C Datasheet

PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)

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PNP Silicon Double Transistors
Preliminary Data
q To be used as a current mirror
q Good thermal coupling and VBE matching
q High current gain
q Low emitter-saturation voltage
BCV 62
Type
BCV 62 A
BCV 62 B
BCV 62 C
Marking
3Js
3Ks
3Ls
Ordering Code
(tape and reel)
Q62702-C2158
Q62702-C2159
Q62702-C2160
Pin Configuration
Package1)
SOT-143
Maximum Ratings
Parameter
Collector-emitter voltage
(transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
Collector current
Collector peak current
Base peak current (transistor T1)
Total power dissipation, TS = 99 ˚C2)
Junction temperature
Storage temperature range
Symbol
VCE0
VCB0
VEBS
IC
ICM
IBM
Ptot
Tj
Tstg
Values
30
Unit
V
30
6
100 mA
200
200
300 mW
150 ˚C
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Rth JA
Rth JS
240
170
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
K/W
Semiconductor Group
1
5.91



Siemens Electronic Components Datasheet

BCV62C Datasheet

PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)

No Preview Available !

BCV 62
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics for transistor T1
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150 ˚C
DC current gain1)
IC = 0.1 mA, VCE = 5 V
IC = 2 mA, VCE = 5 V
BCV 62 A
BCV 62 B
BCV 62 C
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter saturation voltage1)
IC = 10 mA, IC = 0.5 mA
IC = 100 mA, IC = 5 mA
Base-emitter voltage
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 30
V
V(BR)CB0 30
V(BR)EBS 6 – –
ICB0
hFE
VCEsat
VBEsat
VBE
– – 15 nA
– – 5 µA
100 –
125 180 220
220 290 475
420 520 800
mV
– 75 300
– 250 650
– 700 –
– 850 –
600 650 750
– – 820
1) Pulse test conditions: t 300 µs, D = 2 %.
Semiconductor Group
2


Part Number BCV62C
Description PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)
Maker Siemens Semiconductor Group
Total Page 5 Pages
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