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BSM 200 GB 120 DL
IGBT Power Module Preliminary data • Low Loss IGBT • Low inductance halfbridge • Including fast free- wheeling diodes • Package with insulated metal base plate Type BSM 200 GB 120 DL Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
VCE
IC
Package HALF-BRIDGE 2
Ordering Code C67076-A2300-A70
1200V 340A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 340 200
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
680 400
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
1400
W + 150 -40 ... + 125 ≤ 0.09 ≤ 0.
BSM200GB120 Datasheet
