Datasheet Summary
GaAlAs-Lumineszenzdiode (660 nm) GaAlAs Light Emitting Diode (660 nm)
SFH 464
ø0.45
2.54 mm spacing
Chip position
ø4.3 ø4.1
1 0.9 .1 1.1 .9 0
14.5 12.5
3.6 3.0
ø5.5 ø5.2
GET06625
Anode (LD 242, BPX 63, SFH 464) Cathode (SFH 483) Approx. weight 0.5 g
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q Strahlung im sichtbaren Rotbereich ohne IR-
Features
Radiation without IR in the visible red range Cathode is electrically connected to the case Very high efficiency High reliability Short switching time Same package as BP 103, LD 242 DIN humidity category in acc. with DIN 40040 GQG q ponent subjected to aperture...
