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SFH464 - GaAlAs Light Emitting Diode

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value 40 + 80 3 50 1 140 450

Features

  • Radiation without IR in the visible red range Cathode is electrically connected to the case Very high efficiency High reliability Short switching time Same package as BP 103, LD 242 DIN humidity category in acc. with DIN 40040 GQG q Component subjected to aperture measurement (E 7800) q q q q q q q Anteil q Kathode galvanisch mit dem Gehäuseboden verbunden Sehr hoher Wirkungsgrad Hohe Zuverlässigkeit Kurze Schaltzeiten Gehäusegleich mit BP 103, LD 242 Anwendungsklassen nach DIN 40040 GQG Lochb.

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Full PDF Text Transcription

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GaAlAs-Lumineszenzdiode (660 nm) GaAlAs Light Emitting Diode (660 nm) SFH 464 ø0.45 2.54 mm spacing Chip position ø4.3 ø4.1 1 0.9 .1 1.1 .9 0 2.7 1 14.5 12.5 3.6 3.0 ø5.5 ø5.2 GET06625 Anode (LD 242, BPX 63, SFH 464) Cathode (SFH 483) Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Strahlung im sichtbaren Rotbereich ohne IR- Features Radiation without IR in the visible red range Cathode is electrically connected to the case Very high efficiency High reliability Short switching time Same package as BP 103, LD 242 DIN humidity category in acc.
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