SFH495P Datasheet - Siemens Semiconductor Group

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

SFH495P Features

* q Stimulated emitter with high efficiency q Laser diode in diffuse package q Suitable esp. for pulse operation at high Wirkungsgrad Laserdiode in diffusem Gehäuse Besonders geeignet für Impulsbetrieb bei hohen Strömen Hohe Zuverlässigkeit Gegurtet lieferbar current q High reliability q Available o

SFH495P General Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Stoßstrom, tp = 200 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Kennwerte (TA = 25 °C) Characteristics Bezeichnung Description Wellenlänge der Strahlun.

SFH495P Datasheet (43.77 KB)

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SFH495P

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Siemens Semiconductor Group

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43.77 KB

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Gaas-ir-lumineszenzdiode gaas infrared emitter.
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 29 27 5.0 4.2 Anode 2.54 mm spacing 5.9 5.5 0.6 0.4 0.8 0.4 Area not flat C.

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SFH495P GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Siemens Semiconductor Group

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SFH495P Features

SFH495P General Description

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