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Title
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Description
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SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and...
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Features
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18A,200V,RDS(on)(typ.)=0.12Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
ORDERING INFORMATION
Part No. SVD640T SVD640D SVD640DTR SVD640F
Package TO-220-3L TO-252-2L TO-252-2L TO-220F-3L
Marking SVD640T SVD640D SVD640D SVD640F
Material Pb free Halogen free Halogen free Pb free
Packing Tube Tube
Tape & Re...
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Datasheet
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 SVD640F Datasheet - 401.76KB |
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Distributor
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Stock
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In stock
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Price
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BuyNow
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 - Manufacturer a
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