| Title | |
| Description | SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. These devices are widely used in UPS, Power Management for Inverter Systems. FEATURES 80A, 60V, RDS(on)(typ.)=7.0m@VGS=... |
| Features |
80A, 60V, RDS(on)(typ.)=7.0m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
2
S1
8D
S2
7D
1
S3
6D
G4
5D
3 1.Gate 2.Drain 3.Source
13
TO-252-2L
PDFN-8-5X6X0.95-1.27
1 2 3 TO-220-3L
1
3
TO-263-2L
ORDERING INFORMATION
Part No. SVT068R5NT SVT068R5NDTR SVT068R5NSTR SVT068R5NL5TR
Package TO-220-3L T...
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| Datasheet |
 SVT068R5NS Datasheet - 358.71KB |
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