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SSM9916J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the SSM9916J datasheet PDF. This datasheet also covers the SSM9916H variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSM9916H_SiliconStandard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSM9916J
Manufacturer Silicon Standard
File Size 291.70 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet SSM9916J Datasheet

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Other Datasheets by Silicon Standard

Part Number Description
SSM9916H N-Channel Enhancement-Mode Power MOSFET
SSM9915H N-Channel Enhancement-Mode Power MOSFET
SSM9915J N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SSM9915K N-channel Enhancement-mode Power MOSFET
SSM9918H N-Channel Enhancement Modt

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSM9916H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.5V gate drive Low drive current Simple drive requirement Description D G S Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TC=25°C ID @ TC=125°C IDM PD @ TC=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.