SGM2016AM - GaAs N-channel Dual-Gate MES FET
SGM2016AM Features
* Low voltage operation
* Low noise NF = 1.2dB (typ.) at 900MHz
* High gain Ga = 21dB (typ.) at 900MHz
* High stability
* Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Structure GaAs, N-channel, dual-gate m