Datasheet4U Logo Datasheet4U.com

ST2304SRG Datasheet 3.2A N-Channel Enhancement Mode MOSFET

Manufacturer: Stanson Technology

Overview: DESCRIPTION ST2304SRG N Channel Enhancement Mode MOSFET 3.2A ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench.

Datasheet Details

Part number ST2304SRG
Manufacturer Stanson Technology
File Size 749.44 KB
Description 3.2A N-Channel Enhancement Mode MOSFET
Download ST2304SRG Download (PDF)

General Description

ST2304SRG N Channel Enhancement Mode MOSFET 3.2A ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.