The ST2305 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
| Part number | ST2305 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 131.53 KB |
| Description | P Channel Enchancement Mode MOSFET |
| Datasheet |
 ST2305 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| ST2302 | N-Channel MOSFET | VBsemi |
| ST230C | PHASE CONTROL THYRISTORS | IRF |
| ST230C04C | PHASE CONTROL THYRISTORS | International Rectifier |
| ST230C08C | PHASE CONTROL THYRISTORS | International Rectifier |
| ST230C12C | PHASE CONTROL THYRISTORS | International Rectifier |
| Part Number | Description |
|---|---|
| ST2305A | P Channel Enhancement Mode MOSFET |
| ST2300 | N-Channel Enhancement Mode MOSFET |
| ST2300SRG | N-Channel Enhancement Mode MOSFET |
| ST2301 | P Channel Enchancement Mode MOSFET |
| ST2301A | P-Channel Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
