ST2317S23RG Description
ST2317S23RG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low...
ST2317S23RG Key Features
- 40V/-5.0A, RDS(ON) = 37mΩ (Typ.) @VGS = -10V
- 40V/-3.0A, RDS(ON) = 51mΩ @VGS = -4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- SOT-23 package design STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. ST231