ST3403 - P Channel Enchancement Mode MOSFET

Stanson Technology

General Description

The ST3403 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number	ST3403
Manufacturer	Stanson Technology
File Size	174.57 KB
Description	P Channel Enchancement Mode MOSFET
Datasheet	ST3403 Datasheet

Full PDF Text Transcription for ST3403 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for ST3403. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com P Channel Enchancement Mode MOSFET -3.5A DESCRIPTION ST3403 The ST3403 is the P-Channel logic enhancement mode power field effect transistor are produ...

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Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. PIN CONFIGURATION SOT-23-3L 3 FEATURE -30V/-2.8A, RDS(ON) = 105m-ohm @VGS = -10V -30V/-2.5A, RDS(ON) = 115m-ohm @VGS = -4.5V -30V/-1.5A, RDS(ON) = 155m-ohm @VGS = -2.5V RDS(ON) =

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