ST3407S23RG - P-Channel Enhancement Mode MOSFET

Stanson Technology

General Description

ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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ST3407S23RG p-channel enhancement mode mosfet by Stanson Technology - Datasheet Preview

Datasheet Details

Part number	ST3407S23RG
Manufacturer	Stanson Technology
File Size	146.11 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	ST3407S23RG Datasheet

Other Datasheets by Stanson Technology

Part Number	Description
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ST3400S23RG	N-Channel Enhancement Mode MOSFET
ST3400SRG	N-Channel Enhancement Mode MOSFET
ST3401	P-Channel Enhancement Mode MOSFET
ST3401M23RG	P-Channel Enhancement Mode MOSFET
ST3401SRG	P-Channel Enhancement Mode MOSFET
ST3402	N Channel Enhancement Mode MOSFET
ST3403	P Channel Enchancement Mode MOSFET

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ST3407S23RG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 3 D G S 1 2 FEATURE -30V/-4.0A, RDS(ON) = 45mΩ(Typ.) @VGS = -10V -30V/-3.2A, RDS(ON) = 65mΩ @VGS = -4.