| Part number | ST3407S23RG |
|---|---|
| Datasheet | ST3407S23RG-StansonTechnology.pdf |
| File Size | 146.11 KB |
| Manufacturer | Stanson Technology |
| Description | P-Channel Enhancement Mode MOSFET |
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ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are...
See all Stanson Technology datasheets
| Part Number | Description |
|---|---|
| ST3407SRG | P-Channel Enhancement Mode MOSFET |
| ST3407 | P Channel Enhancement Mode MOSFET |
| ST3400 | N Channel Enhancement Mode MOSFET |
| ST3400S23RG | N-Channel Enhancement Mode MOSFET |
| ST3400SRG | N-Channel Enhancement Mode MOSFET |
| ST3401 | P-Channel Enhancement Mode MOSFET |
| ST3401M23RG | P-Channel Enhancement Mode MOSFET |
| ST3401SRG | P-Channel Enhancement Mode MOSFET |
| ST3402 | N Channel Enhancement Mode MOSFET |
| ST3403 | P Channel Enchancement Mode MOSFET |
