ST3407SRG Overview
Description
ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Key Features
- 30V/-4.0A, RDS(ON) = 54mΩ (Typ.) @VGS = -10V
- V1 ST3407SRG P Channel Enhancement Mode MOSFET
- 30 ±20 -3.6 -3.0 -15 Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ
- 1.0 1.20 0.8 150 Storage Temperature Range TSTG
- 55/150 RθJA 120 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST3407SRG
