ST3407 Datasheet | Stanson Technology

.. P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE - 3 D G 1 S 2 - - - - -30V/-4.0A, RDS(ON) = 60mΩ @VGS = -10V -30V/-3.2A, RDS(ON) = 80mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L A7YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number ST3407S23RG Package SOT-23-3L Part Marking A7YA ※ Process Code : A ~ Z ; a ~ z ※ ST3407S23RG S 23: SOT-23-3L ; R : Tape Reel ; G : Pb - Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. ST3407 2006. V1 .. P Channel Enhancement Mode MOSFET -3.6A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -30 ±20 -3.6 -3.0 -15 -1.0 1.25 0.8 150 -55/150 120 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. ST3407 2006. V1 .. P Channel Enhancement Mode...