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2SB817E Datasheet Power Transistor

Manufacturer: TAITRON

Datasheet Details

Part number 2SB817E
Manufacturer TAITRON
File Size 235.52 KB
Description Power Transistor
Download 2SB817E Download (PDF)

General Description

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Power Dissipation at TC=25°C 2SB817E 160 140 6.0 12 15 100 0.8 1.25 -55 to +150 Unit V V V A A W W/° C ° C /W °C Conditions VCBO VCEO VEBO IC ICM Ptot Power Dissipation Derate above 25°C RθJC TJ, TSTG Thermal Resistance from Junction to Case Operating and Storage Junction Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev.

A/AH 2008-04-16 Page 1 of 3 Free Datasheet http://www.datasheet4u.com/ Power Transistor (PNP) 2SB817E Electrical Characteristics (T Ambient=25ºC unless noted otherwise) 2SB817E Symbol Description Min.

100 Max.

Overview

Power Transistor (PNP) 2SB817E Power Transistor (PNP).

Key Features

  • 2SB817E transistor is designed for use in general purpose power amplifier,.