2SB817E Key Features
- 2SB817E transistor is designed for use in general purpose power amplifier, application
- hFE V(BR)CBO V(BR)CEO V(BR)EBO -VCE(sat) -VBE(on) ICBO IEBO ton ts tf
- VCC=20V, IC=1.0A IB1=-IB2=100mA
- Pulse Test: Pulse Width= 300µs, Duty Cycle ≤2.0%
- SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052
