IRF840
IRF840 is Power MOSFET manufactured by TRANSYS.
Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A
N Channel
S Symbol
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Drain to Source Breakdown Voltage Drain to Source Leakage Current
Gate to Source Leakage Current Gate Threshold Voltage
V(BR)DSS VGS = 0 VDC, ID = 250µA
IDSS
VDS = 500VDC, VGS = 0VDC VDS = 400VDC, VGS = 0VDC Tj=125 C
IGSS VGS(th)
VGS = +20VDC VGS = -20VDC VDS = VGS, ID = 250µA
Static Drain to Source On
- Resistance RDS(on) VGS= 10VDC, ID = 4.8A
Gate Charge Gate to Source Charge Gate to Drain Charge Input Capacitance Output Capacitance Transfer Capacitance
Turn On Delay Time Turn Off Delay Time Rise Time Fall Time Continuous Source Current Pulsed Source Current Forward Voltage (Diode)
QG QGS QGD
ID = 8.0A VDS = 400VDC, VGS = 10VDC
CISS
COSS VDS = 25VDC, VGS= 0VDC, f = 1.0MHZ
CRSS td(on) td(off) tr
VDD = 250VDC, ID = 8.0A, RG = 9.1 RD = 31 tf
IS ISM VSD VGS = 0VDC, IS...
