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IRF840 Datasheet - TRANSYS

IRF840 Power MOSFET

IRF840 Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A D G N Channel S Symbol ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Parameter Symbol Test Conditions Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current Gate Threshold Voltage V(BR)DSS VGS = 0 VDC, ID = 250µA IDSS VDS = 500VDC, VGS = 0VDC VDS = 400VDC, VGS = 0VDC Tj=125 C IGSS VGS(th) VGS = +20VDC VGS = -20VDC VDS = VGS, ID = 250µA Static Drain to .

IRF840-TRANSYS.pdf

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Datasheet Details

Part number:

IRF840

Manufacturer:

TRANSYS

File Size:

147.16 KB

Description:

Power mosfet.

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IRF840 IRF840 Power MOSFET TRANSYS