2SB806

The 2SB806 is Transistor designed by TY Semiconductor.

Product Overview

TY Semiconductor

Part number	2SB806
Manufacturer	TY Semiconductor
File Size	291.78 KB
Description	Transistor
Datasheet	2SB806_TYSemiconductor.pdf
Additional preview pages of the 2SB806 datasheet.

1 2 3 ¡ñ High collector to emitter voltage: VCEO£¾-120V. 0 .8 0 ¡À 0 .1 0.44¡À0.1 2 .6 0 ¡À 0 .1 0 .4 0 ¡À 0 .1 1.Base 2.Collector 3.Emitter Min 0.48¡À0.1 0.53¡À0.1 3.00¡À0.1 ¡ö Absolute Maximum Ratings Ta = 25¡æ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse).
1 Collector power dissipation Junction temperature Storage temperature.
1. PW¡Ü10ms,duty cycle¡Ü50% Symbol VCBO VCEO VEBO IC IC(pu) Pc Tj Tstg Rati.

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Other Datasheets by TY Semiconductor

Published: Oct 25, 2013 |