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TP44100SG - 650V GaN HEMT

Description

The TP44100SG is a 90 mΩ 650 V SUPERIOR GaN HEMT power device.

With low input/output capacitances and a low inductance QFN package, the device allows high frequency switching.

Features

  • 650 V e-mode power HEMT.
  • RDSON: 90 mΩ.
  • IDS: 19 A (max) / IDSpulse: 30 A (max).
  • ESD protection on all pins.
  • Adjustable turn-on/-off speed.
  • Reverse conduction capability.
  • Zero reverse-recovery loss.
  • High switching frequency capability.
  • LV-isolated thermal-pad for better thermal connection even with current-sense resistors.
  • Interfaces with 6 V and ≥12 V drivers (see.

📥 Download Datasheet

Datasheet Details

Part number TP44100SG
Manufacturer Tagore
File Size 920.71 KB
Description 650V GaN HEMT
Datasheet download datasheet TP44100SG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TP44100SG SUPERIOR GaN TP44100SG – 90 mΩ, 650 V GaN HEMT 1.0 Features • 650 V e-mode power HEMT • RDSON: 90 mΩ • IDS: 19 A (max) / IDSpulse: 30 A (max) • ESD protection on all pins • Adjustable turn-on/-off speed • Reverse conduction capability • Zero reverse-recovery loss • High switching frequency capability • LV-isolated thermal-pad for better thermal connection even with current-sense resistors • Interfaces with 6 V and ≥12 V drivers (see Application Information) (Top View) (Bottom View) Figure 1 Device Image (22 pin 5×7×0.8 mm QFN Package) 2.
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