TP44100SG Datasheet 650v Gan Hemt

Manufacturer: Tagore

Overview: TP44100SG SUPERIOR GaN TP44100SG – 90 mΩ, 650 V GaN HEMT 1.0.

Datasheet Details

The TP44100SG is a 90 mΩ 650 V SUPERIOR GaN HEMT power device.

With low input/output capacitances and a low inductance QFN package, the device allows high frequency switching.

Simple external interface circuit can be used to drive this device both from dedicated 6 V GaN drivers as well as more traditional 12 V drivers.

650 V e-mode power HEMT.
RDSON: 90 mΩ.
IDS: 19 A (max) / IDSpulse: 30 A (max).
ESD protection on all pins.
Adjustable turn-on/-off speed.
Reverse conduction capability.
Zero reverse-recovery loss.
High switching frequency capability.
LV-isolated thermal-pad for better thermal connection even with current-sense resistors.
Interfaces with 6 V and ≥12 V drivers (see.