Datasheet Summary
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 38A, 99mΩ
Features
- Super-Junction technology
- High performance, small RDS(ON)- Qg figure of merit (FOM)
- High ruggedness performance
- 100% UIS and Rg tested
- pliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
RDS(on) (max)
99 mΩ
Qg
62 nC
APPLICATIONS
- PFC stage
- Server/Tele Power
- Charging Station
- Inverter
- Power...