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TSM60NB041PW - N-Channel Power MOSFET

Datasheet Summary

Features

  • Super-Junction technology.
  • High performance, small RDS(ON).
  • Qg figure of merit (FOM).
  • High ruggedness performance.
  • 100% UIS and Rg tested.
  • Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 KEY.

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Full PDF Text Transcription

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TSM60NB041PW Taiwan Semiconductor N-Channel Power MOSFET 600V, 78A, 41mΩ FEATURES ● Super-Junction technology ● High performance, small RDS(ON)*Qg figure of merit (FOM) ● High ruggedness performance ● 100% UIS and Rg tested ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 600 41 139 V mΩ nC APPLICATIONS ● PFC Stage ● Server/Telecom Power ● Charging Station ● Inverter ● Power Supply TO-247 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Si
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