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TSM60NB099CZ - N-Channel Power MOSFET

Datasheet Summary

Features

  • Super-Junction technology.
  • High performance, small RDS(ON).
  • Qg figure of merit (FOM).
  • High ruggedness performance.
  • 100% UIS and Rg tested.
  • Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 KEY.

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Full PDF Text Transcription

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TSM60NB099CZ Taiwan Semiconductor N-Channel Power MOSFET 600V, 38A, 99mΩ FEATURES ● Super-Junction technology ● High performance, small RDS(ON)*Qg figure of merit (FOM) ● High ruggedness performance ● 100% UIS and Rg tested ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 99 mΩ Qg 62 nC APPLICATIONS ● PFC stage ● Server/Telecom Power ● Charging Station ● Inverter ● Power Supply TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current (Note 1) TC = 25°C ID 38 TC = 100°C 24 Pulsed Drain Current (Note 2)
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