TSM60NB099CZ
TSM60NB099CZ is N-Channel Power MOSFET manufactured by Taiwan Semiconductor.
FEATURES
- Super-Junction technology
- High performance, small RDS(ON)- Qg figure of merit (FOM)
- High ruggedness performance
- 100% UIS and Rg tested
- pliant to Ro HS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
RDS(on) (max)
99 mΩ
Qg
62 n C
APPLICATIONS
- PFC stage
- Server/Tele Power
- Charging Station
- Inverter
- Power Supply
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
±30
Continuous Drain Current (Note 1)
TC = 25°C
TC = 100°C
Pulsed Drain Current (Note 2)
Total Power Dissipation @ TC = 25°C Single Pulse Avalanche Energy (Note 3) Single Pulse Avalanche Current (Note...
