TSM60NB099PW
TSM60NB099PW is N-Channel Power MOSFET manufactured by Taiwan Semiconductor.
FEATURES
- Super-Junction technology
- High performance, small RDS(ON)- Qg figure of merit (FOM)
- High ruggedness performance
- 100% UIS and Rg tested
- pliant to Ro HS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS RDS(on) (max)
Qg
600 99 62
V mΩ n C
APPLICATIONS
- PFC stage
- Server/Tele Power
- Charging Station
- Inverter
- Power Supply
TO-247
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)
TC = 25°C TC = 100°C
Total Power Dissipation @ TC = 25°C Single Pulse Avalanche Energy (Note 3) Single Pulse Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS VGS
IDM PD EAS IAS TJ, TSTG
600...
