TSM60NB150CF Datasheet | Taiwan Semiconductor

FEATURES - Super-Junction technology - High performance, small RDS(ON)- Qg figure of merit (FOM) - High ruggedness performance - 100% UIS and Rg tested - pliant to Ro HS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 600 150 43 V mΩ n C APPLICATIONS - PFC Stage - Power Supply - AC/DC LED Lighting ITO-220S ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Single Pulse Avalanche Energy (Note 3) Single Pulse Avalanche Current (Note 3) Operating Junction and Storage Temperature Range VDS VGS IDM PD EAS IAS TJ, TSTG 600 ±30 24 15 72 62.5 441 4.2 - 55 to...