TSM60NB1R4CP
TSM60NB1R4CP is N-Channel Power MOSFET manufactured by Taiwan Semiconductor.
FEATURES
- Super-Junction technology
- High performance due to small figure-of-merit
- High ruggedness performance
- High mutation performance
- 100% UIL tested
- Pb-free plating
- pliant to Ro HS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS RDS(on) (max)
Qg
600 V 1.4 Ω 7.12 n C
APPLICATIONS
- Power Supply
- Lighting
TO-252 (DPAK)
Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)
TC = 25°C TC = 100°C
Total Power Dissipation @ TC = 25°C Single Pulsed Avalanche Energy (Note 3) Single Pulsed Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS...
