TSM60NB099CF Datasheet | Taiwan Semiconductor

FEATURES - Super-Junction technology - High performance, small RDS(ON)- Qg figure of merit (FOM) - High ruggedness performance - 100% UIS and Rg tested - pliant to Ro HS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 600 99 62 V mΩ n C APPLICATIONS - PFC stage - Server/Tele Power - Charging Station - Inverter - Power Supply ITO-220S ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Single Pulse Avalanche Energy (Note 3) Single Pulse Avalanche Current (Note 3) Operating Junction and Storage Temperature Range VDS VGS IDM PD EAS IAS TJ, TSTG 600...