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TSM60NB099PW N-Channel Power MOSFET

TSM60NB099PW Description

TSM60NB099PW Taiwan Semiconductor N-Channel Power MOSFET 600V, 38A, 99mΩ .

TSM60NB099PW Features

* Super-Junction technology
* High performance, small RDS(ON)
* Qg figure of merit (FOM)
* High ruggedness performance
* 100% UIS and Rg tested
* Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
* Halogen-free according to IEC 61249-2-21 KEY PERF

TSM60NB099PW Applications

* PFC stage
* Server/Telecom Power
* Charging Station
* Inverter
* Power Supply TO-247 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note

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N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM60NB099PW-like datasheet