Full PDF Text Transcription for TSM60NB1R4CP (Reference)
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TSM60NB1R4CP. For precise diagrams, and layout, please refer to the original PDF.
TSM60NB1R4CP Taiwan Semiconductor N-Channel Power MOSFET 600V, 3A, 1.4Ω FEATURES ● Super-Junction technology ● High performance due to small figure-of-merit ● High rugged...
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chnology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance ● 100% UIL tested ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 600 V 1.4 Ω 7.
TSM60NB1R4CP Datasheet
