Datasheet4U Logo Datasheet4U.com

TSM60NB260 - N-Channel Power MOSFET

Key Features

  • Super-Junction technology.
  • High performance, small RDS(ON).
  • Qg figure of merit (FOM).
  • High ruggedness performance.
  • 100% UIS tested.
  • High commutation performance.
  • Pb-free plating.
  • Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 KEY.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TSM600-250F Resettable PPTC Littelfuse
TSM600-250F-RA Resettable PPTC Littelfuse
TSM600-400F Resettable PPTC Littelfuse
TSM6025 Low-Power/Low-Dropout Precision Voltage Reference Touchstone Semiconductor
TSM6025 Low-Power/Low-Dropout Precision Voltage Reference Silicon Laboratories

Other Datasheets by Taiwan Semiconductor

Part Number Description
TSM60NB041PW N-Channel Power MOSFET
TSM60NB099CF N-Channel Power MOSFET
TSM60NB099CZ N-Channel Power MOSFET
TSM60NB099PW N-Channel Power MOSFET
TSM60NB150CF N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TSM60NB260 Taiwan Semiconductor N-Channel Power MOSFET 600V, 13A, 0.26Ω FEATURES ● Super-Junction technology ● High performance, small RDS(ON)*Qg figure of merit (FOM) ● High ruggedness performance ● 100% UIS tested ● High commutation performance ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 600 0.