TSM13N50 Datasheet, Taiwan Semiconductor Company

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* Low RDS(ON) 0.48Ω (Max.) Low gate charge typical @ 36nC (Typ.) Low Crss typical @ 23pF (Typ.) Fast Switching Block Diagram Ordering Information .

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The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ.